Atomic layer deposition of TiO2 using titanium isopropoxide and H2O: Operational principle of equipment and parameter setting

Karam Cho; Jung Dong Park; Changhwan Shin

doi:10.5573/JSTS.2016.16.3.346

Atomic layer deposition of TiO₂ using titanium isopropoxide and H₂O: Operational principle of equipment and parameter setting

Karam Cho
, Jung Dong Park
, Changhwan Shin

Department of Electronics & Electrical Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Titanium dioxide (TiO₂) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H₂O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO₂ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

Original language	English
Pages (from-to)	346-351
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	16
Issue number	3
DOIs	https://doi.org/10.5573/JSTS.2016.16.3.346
State	Published - Jun 2016

Keywords

Atomic layer deposition
HO
TiO
Titanium isopropoxide

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abstract = "Titanium dioxide (TiO2) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H2O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO2 film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.",

keywords = "Atomic layer deposition, HO, TiO, Titanium isopropoxide",

author = "Karam Cho and Park, \{Jung Dong\} and Changhwan Shin",

year = "2016",

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T2 - Operational principle of equipment and parameter setting

AU - Cho, Karam

AU - Park, Jung Dong

AU - Shin, Changhwan

PY - 2016/6

Y1 - 2016/6

N2 - Titanium dioxide (TiO2) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H2O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO2 film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

AB - Titanium dioxide (TiO2) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and H2O as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the TiO2 film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

KW - Atomic layer deposition

KW - HO

KW - TiO

KW - Titanium isopropoxide

UR - https://www.scopus.com/pages/publications/84977504967

U2 - 10.5573/JSTS.2016.16.3.346

DO - 10.5573/JSTS.2016.16.3.346

M3 - Article

AN - SCOPUS:84977504967

SN - 1598-1657

VL - 16

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JO - Journal of Semiconductor Technology and Science

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IS - 3

ER -

Atomic layer deposition of TiO₂ using titanium isopropoxide and H₂O: Operational principle of equipment and parameter setting

Abstract

Keywords

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