Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface

W. C. Yang; M. Zeman; H. Ade; R. J. Nemanich

Attractive migration and coalescence: A significant process in the coarsening of TiSi₂ islands on the Si(111) surface

W. C. Yang, M. Zeman, H. Ade, R. J. Nemanich

Department of Physics

North Carolina State University

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

Real time PEEM was used to observe the surface dynamics of TiSi₂ islands on Si at high temperature. By monitoring the relative position of individual islands, it was found that the islands grew through both Ostwald ripening and attractive migration and coalescence. It was proposed that the attractive migration of the islands is the growth-decay flow of the island edges due to the nonuniform concentration around the islands.

Original language	English
Article number	136102
Pages (from-to)	136102/1-136102/4
Journal	Physical Review Letters
Volume	90
Issue number	13
State	Published - 4 Apr 2003

Cite this

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abstract = "Real time PEEM was used to observe the surface dynamics of TiSi2 islands on Si at high temperature. By monitoring the relative position of individual islands, it was found that the islands grew through both Ostwald ripening and attractive migration and coalescence. It was proposed that the attractive migration of the islands is the growth-decay flow of the island edges due to the nonuniform concentration around the islands.",

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AU - Zeman, M.

AU - Ade, H.

AU - Nemanich, R. J.

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AB - Real time PEEM was used to observe the surface dynamics of TiSi2 islands on Si at high temperature. By monitoring the relative position of individual islands, it was found that the islands grew through both Ostwald ripening and attractive migration and coalescence. It was proposed that the attractive migration of the islands is the growth-decay flow of the island edges due to the nonuniform concentration around the islands.

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ER -

Attractive migration and coalescence: A significant process in the coarsening of TiSi₂ islands on the Si(111) surface

Abstract

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