TY - JOUR
T1 - Au nanoparticles introduced to spinel Co3O4 thin films
T2 - Switching enhancement and magnetization modulation
AU - Yao, Chuangye
AU - Ismail, Muhammad
AU - Hao, Aize
AU - Thatikonda, Santhosh Kumar
AU - Huang, Wenhua
AU - Qin, Ni
AU - Bao, Dinghua
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - Oxygen vacancies derived resistive and magnetic switching, was demonstrated in facile solution-processed Au-Co3O4 nanocomposite thin films, in terms of optimum Au content. The metal element introduced is a unique way to create the optimum amount of oxygen vacancies in the dielectric films even in the absence of electrochemically active electrodes. Compared with pure Co3O4 based device, the RRAM device with Au additives showed bipolar switching behavior with uniform Set/Reset voltages, enhanced endurance of >103 cycles, and stable time-dependent resistances up to 104 s. The introduction of Au nanoparticles caused the oxygen vacancies based confined filament growth for optimum switching uniformity and stability. Results showed that Ohmic conduction was dominant at LRS and Schottky emission was dominated at HRS of the devices. Temperature dependence and magnetization change of various resistance states revealed that resistive and magnetic switching was due to the formation and rupture of conductive filaments of Au atoms confined oxygen vacancies with the conversion of cation valence states (Co2+ and Co3+). The present study suggests that Au-Co3O4 nanocomposite thin films have a potential for future multifunctional electromagnetic integrated device applications.
AB - Oxygen vacancies derived resistive and magnetic switching, was demonstrated in facile solution-processed Au-Co3O4 nanocomposite thin films, in terms of optimum Au content. The metal element introduced is a unique way to create the optimum amount of oxygen vacancies in the dielectric films even in the absence of electrochemically active electrodes. Compared with pure Co3O4 based device, the RRAM device with Au additives showed bipolar switching behavior with uniform Set/Reset voltages, enhanced endurance of >103 cycles, and stable time-dependent resistances up to 104 s. The introduction of Au nanoparticles caused the oxygen vacancies based confined filament growth for optimum switching uniformity and stability. Results showed that Ohmic conduction was dominant at LRS and Schottky emission was dominated at HRS of the devices. Temperature dependence and magnetization change of various resistance states revealed that resistive and magnetic switching was due to the formation and rupture of conductive filaments of Au atoms confined oxygen vacancies with the conversion of cation valence states (Co2+ and Co3+). The present study suggests that Au-Co3O4 nanocomposite thin films have a potential for future multifunctional electromagnetic integrated device applications.
KW - Conductive filaments
KW - Nanocrystalline Au-CoO composite films
KW - Oxygen vacancies
KW - Resistive and magnetic switching
UR - http://www.scopus.com/inward/record.url?scp=85070875034&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2019.165702
DO - 10.1016/j.jmmm.2019.165702
M3 - Article
AN - SCOPUS:85070875034
SN - 0304-8853
VL - 493
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
M1 - 165702
ER -