Abstract
We demonstrate back-gate-tuning of the Schottky barrier height in graphene/zinc oxide photodiodes that are devised by a selective sputter-growth of ZnO on pre-patterned single-layer graphene sheets. The devices show a clear rectifying behavior (e.g., Schottky barrier height ∼0.65 eV and ideality factor ∼1.15) and an improvement in the photo-response via application of a back-gate voltage. The back-gate bias tunes the effective Schottky barrier-height and also promotes the activation of photo-excited carriers, which leads to an enhancement in the thermionic emission process.
| Original language | English |
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| Article number | 242114 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 24 |
| DOIs | |
| State | Published - 17 Jun 2013 |