Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

Sung Heo, Jae Gwan Chung, Jae Cheol Lee, Taewon Song, Seong Heon Kim, Dong Jin Yun, Hyung Ik Lee, Ki Hong Kim, Gyeong Su Park, Jong Soo Oh, Dong Wook Kwak, Dong Wha Lee, Hoon Young Cho, Dahlang Tahi, Hee Jae Kang, Byoung Deog Choi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect.

Original languageEnglish
Pages (from-to)1062-1065
Number of pages4
JournalSurface and Interface Analysis
Volume48
Issue number10
DOIs
StatePublished - 1 Oct 2016

Keywords

  • defect states
  • GIZO
  • PICTS
  • REELS
  • TSEE
  • XPS

Fingerprint

Dive into the research topics of 'Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates'. Together they form a unique fingerprint.

Cite this