Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Z. A. Yunusov, Sh U. Yuldashev, Y. H. Kwon, D. Y. Kim, S. J. Lee, H. C. Jeon, H. Jung, A. Kim, T. W. Kang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1−xMnxO1−ySy thin films with manganese x = 0.05 and sulfur 0 ≤ y ≤ 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume446
DOIs
StatePublished - 15 Jan 2018

Keywords

  • Diluted magnetic semiconductors (DMS)
  • Room temperature ferromagnetism
  • ZnO
  • ZnS alloy

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