Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Z. A. Yunusov; Sh U. Yuldashev; Y. H. Kwon; D. Y. Kim; S. J. Lee; H. C. Jeon; H. Jung; A. Kim; T. W. Kang

doi:10.1016/j.jmmm.2017.09.043

Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Z. A. Yunusov
, Sh U. Yuldashev
, Y. H. Kwon
, D. Y. Kim
, S. J. Lee
, H. C. Jeon
, H. Jung
, A. Kim
, T. W. Kang

Dongguk University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn_1−xMn_xO_1−yS_y thin films with manganese x = 0.05 and sulfur 0 ≤ y ≤ 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	446
DOIs	https://doi.org/10.1016/j.jmmm.2017.09.043
State	Published - 15 Jan 2018

Keywords

Diluted magnetic semiconductors (DMS)
Room temperature ferromagnetism
ZnO
ZnS alloy

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10.1016/j.jmmm.2017.09.043

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title = "Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS",

abstract = "In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1−xMnxO1−ySy thin films with manganese x = 0.05 and sulfur 0 ≤ y ≤ 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.",

keywords = "Diluted magnetic semiconductors (DMS), Room temperature ferromagnetism, ZnO, ZnS alloy",

author = "Yunusov, \{Z. A.\} and Yuldashev, \{Sh U.\} and Kwon, \{Y. H.\} and Kim, \{D. Y.\} and Lee, \{S. J.\} and Jeon, \{H. C.\} and H. Jung and A. Kim and Kang, \{T. W.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = jan,

day = "15",

doi = "10.1016/j.jmmm.2017.09.043",

language = "English",

volume = "446",

pages = "206--209",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

AU - Yunusov, Z. A.

AU - Yuldashev, Sh U.

AU - Kwon, Y. H.

AU - Kim, D. Y.

AU - Lee, S. J.

AU - Jeon, H. C.

AU - Jung, H.

AU - Kim, A.

AU - Kang, T. W.

PY - 2018/1/15

Y1 - 2018/1/15

N2 - In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1−xMnxO1−ySy thin films with manganese x = 0.05 and sulfur 0 ≤ y ≤ 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.

AB - In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn1−xMnxO1−ySy thin films with manganese x = 0.05 and sulfur 0 ≤ y ≤ 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration.

KW - Diluted magnetic semiconductors (DMS)

KW - Room temperature ferromagnetism

KW - ZnO

KW - ZnS alloy

UR - https://www.scopus.com/pages/publications/85029646270

U2 - 10.1016/j.jmmm.2017.09.043

DO - 10.1016/j.jmmm.2017.09.043

M3 - Article

AN - SCOPUS:85029646270

SN - 0304-8853

VL - 446

SP - 206

EP - 209

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

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Keywords

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