Barrier height at the graphene and carbon nanotube junction

Tae Geun Kim; Un Jeong Kim; Si Young Lee; Young Hee Lee; Yun Seop Yu; Sung Woo Hwang; Sangsig Kim

doi:10.1109/TED.2014.2317799

Barrier height at the graphene and carbon nanotube junction

Tae Geun Kim
, Un Jeong Kim
, Si Young Lee
, Young Hee Lee
, Yun Seop Yu
, Sung Woo Hwang
, Sangsig Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

Original language	English
Article number	6810140
Pages (from-to)	2203-2207
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	6
DOIs	https://doi.org/10.1109/TED.2014.2317799
State	Published - Jun 2014

Keywords

Barrier height
FET
SPICE
carbon nanotube (CNT)
graphene

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10.1109/TED.2014.2317799

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title = "Barrier height at the graphene and carbon nanotube junction",

abstract = "Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.",

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author = "Kim, \{Tae Geun\} and Kim, \{Un Jeong\} and Lee, \{Si Young\} and Lee, \{Young Hee\} and Yu, \{Yun Seop\} and Hwang, \{Sung Woo\} and Sangsig Kim",

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AU - Kim, Tae Geun

AU - Kim, Un Jeong

AU - Lee, Si Young

AU - Lee, Young Hee

AU - Yu, Yun Seop

AU - Hwang, Sung Woo

AU - Kim, Sangsig

PY - 2014/6

Y1 - 2014/6

N2 - Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

AB - Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

KW - Barrier height

KW - FET

KW - SPICE

KW - carbon nanotube (CNT)

KW - graphene

UR - https://www.scopus.com/pages/publications/84901412792

U2 - 10.1109/TED.2014.2317799

DO - 10.1109/TED.2014.2317799

M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 6810140

ER -

Barrier height at the graphene and carbon nanotube junction

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Keywords

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