Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
- Hyeonseok Woo
- , Jongkyong Lee
- , Yongcheol Jo
- , Jaeseok Han
- , Jongmin Kim
- , Hyungsang Kim
- , Cheong Hyun Roh
- , Jun Ho Lee
- , Jungho Park
- , Cheol Koo Hahn
- , Hyunsik Im
- Dongguk University
- Korea Electronics Technology Institute
- Korea University
Research output: Contribution to journal › Article › peer-review
11
Scopus
citations