Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

B. G. Min; J. H. Yoo; H. C. Sohn; D. H. Ko; M. H. Cho; K. B. Chung; T. W. Lee

doi:10.1016/j.tsf.2009.07.145

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si_0.7Ge_0.3 film

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, K. B. Chung, T. W. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The change of strain in Si_0.7Ge_0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si_0.7Ge_0.3 substrate.

Original language	English
Pages (from-to)	2065-2069
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2009.07.145
State	Published - 1 Feb 2010

Keywords

Ge pile-up layer
Medium energy ion scattering
Oxidation
Relaxation
SiGe
Strain

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10.1016/j.tsf.2009.07.145

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title = "Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film",

abstract = "The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.",

keywords = "Ge pile-up layer, Medium energy ion scattering, Oxidation, Relaxation, SiGe, Strain",

author = "Min, {B. G.} and Yoo, {J. H.} and Sohn, {H. C.} and Ko, {D. H.} and Cho, {M. H.} and Chung, {K. B.} and Lee, {T. W.}",

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TY - JOUR

T1 - Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si0.7Ge0.3 film

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Chung, K. B.

AU - Lee, T. W.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.

AB - The change of strain in Si0.7Ge0.3 films was investigated with medium energy ion scattering (MEIS). Si was removed in the films by selective oxidation at 800 °C, resulting in the formation of a Ge pile-up layer on the surface. The relaxation and the thickness of the pile-up layer were closely related to the oxidation time. MEIS data demonstrated that relaxation of the Ge layer in the depth direction occurred partially, and that the rates of relaxation decreased with depth. In addition, the rate of relaxation increased with the oxidation time. Lastly, the relaxation of the Ge layer affected the strain of the remaining Si0.7Ge0.3 substrate.

KW - Ge pile-up layer

KW - Medium energy ion scattering

KW - Oxidation

KW - Relaxation

KW - SiGe

KW - Strain

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DO - 10.1016/j.tsf.2009.07.145

M3 - Article

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SN - 0040-6090

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 8

ER -

Behavior of strain at a thin Ge pile-up layer formed by dry oxidation of a Si_0.7Ge_0.3 film

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Keywords

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