Behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates

Sh U. Yuldashev; Y. B. Hou; J. H. Leem; H. C. Jeon; T. W. Kang; T. W. Kim

doi:10.1016/S0038-1098(99)00099-X

Behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates

Sh U. Yuldashev, Y. B. Hou, J. H. Leem, H. C. Jeon, T. W. Kang, T. W. Kim

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

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Abstract

Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow donor-band recombination (D, h) peak. The temperature dependence of the PL intensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. These results indicate that the PL intensity and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes.

Original language	English
Pages (from-to)	413-418
Number of pages	6
Journal	Solid State Communications
Volume	110
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1098(99)00099-X
State	Published - 29 Apr 1999

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title = "Behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates",

abstract = "Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow donor-band recombination (D, h) peak. The temperature dependence of the PL intensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. These results indicate that the PL intensity and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes.",

author = "Yuldashev, {Sh U.} and Hou, {Y. B.} and Leem, {J. H.} and Jeon, {H. C.} and Kang, {T. W.} and Kim, {T. W.}",

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T1 - Behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates

AU - Yuldashev, Sh U.

AU - Hou, Y. B.

AU - Leem, J. H.

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kim, T. W.

PY - 1999/4/29

Y1 - 1999/4/29

N2 - Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow donor-band recombination (D, h) peak. The temperature dependence of the PL intensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. These results indicate that the PL intensity and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes.

AB - Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow donor-band recombination (D, h) peak. The temperature dependence of the PL intensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. These results indicate that the PL intensity and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes.

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U2 - 10.1016/S0038-1098(99)00099-X

DO - 10.1016/S0038-1098(99)00099-X

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AN - SCOPUS:0032683068

SN - 0038-1098

VL - 110

SP - 413

EP - 418

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates

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