@inproceedings{d9ccdcf3496548c79cbf5a3d0c2fdaa5,
title = "Biosensing characteristics of InAs nanowire transistors grown by MOCVD",
abstract = "We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (ρ = 1-10 Ω-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 ∼ 150 nm were grown and the doping concentration also was changed around x±1016∼18/cm2. IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions.",
keywords = "Biosensor, Field effect transistor, InAs, MOCVD, Nanowires",
author = "Kim, {Doo Gun} and Jeongwoo Hwang and Kim, {Seon Hoon} and Ki, {Hyun Chul} and Kim, {Tae Un} and Shin, {Jae Cheol} and Choi, {Young Wan}",
note = "Publisher Copyright: Copyright {\textcopyright} 2017 SPIE.; Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV 2017 ; Conference date: 30-01-2017 Through 31-01-2017",
year = "2017",
doi = "10.1117/12.2253637",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Huffaker, {Diana L.} and Holger Eisele",
booktitle = "Quantum Dots and Nanostructures",
address = "United States",
}