Biosensing characteristics of InAs nanowire transistors grown by MOCVD

Doo Gun Kim, Jeongwoo Hwang, Seon Hoon Kim, Hyun Chul Ki, Tae Un Kim, Jae Cheol Shin, Young Wan Choi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (ρ = 1-10 Ω-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 ∼ 150 nm were grown and the doping concentration also was changed around x±1016∼18/cm2. IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions.

Original languageEnglish
Title of host publicationQuantum Dots and Nanostructures
Subtitle of host publicationGrowth, Characterization, and Modeling XIV
EditorsDiana L. Huffaker, Holger Eisele
PublisherSPIE
ISBN (Electronic)9781510606692
DOIs
StatePublished - 2017
EventQuantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV 2017 - San Francisco, United States
Duration: 30 Jan 201731 Jan 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10114
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceQuantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV 2017
Country/TerritoryUnited States
CitySan Francisco
Period30/01/1731/01/17

Keywords

  • Biosensor
  • Field effect transistor
  • InAs
  • MOCVD
  • Nanowires

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