Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device

Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characteristics. Moreover, complementary resistive switching (CRS) is achieved by applying the compliance current at negative bias and increasing the voltage at positive bias. The synaptic behaviors such as long-term potentiation and long-term depression are emulated by applying consecutive pulse input to the device. The CRS mode has a higher array size in the crosspoint array structure than the BRS mode due to more nonlinear I-V characteristics in the CRS mode. However, we reveal that the BRS mode shows a better pattern recognition rate than the CRS mode due to more uniform conductance update.

Original languageEnglish
Article number315
Pages (from-to)1-9
Number of pages9
JournalNanomaterials
Volume11
Issue number2
DOIs
StatePublished - Feb 2021

Keywords

  • Memristor
  • Neural network simulation
  • Neuromorphic system
  • Resistive switching
  • Synaptic device
  • X-ray photoelectron spectroscopy

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