Bipolar and rectifying resistive switching dynamics in E-beam evaporated SnO_x based memristor

In this article, we have examined the crystallinity and semiconducting properties (n-type and/or p-type) of e-beam evaporated Tin-oxide (SnO_x) with different deposition substrate temperature and study their impact over resistive switching dynamics with Silver (Ag) active and Platinum (Pt) inert metal electrode. The fabricated Resistive switching (RS) devices have performed forming free bipolar and rectifying resistive switching with n-type and p-type semiconducting properties of deposited insulating layer, respectively. The crystal structure and elemental composition of deposited insulating layers (SnOx) have been characterized by using Glancing Angel X-Ray Diffraction (GAXRD) and Energy Dispersive X-Ray (EDX). The electrical responses of fabricated RS devices have been observed by using Keithley-4200 parametric analyser with customize probe station and performance of the bipolar and rectifying RS devices have been analysed with low sweeping voltage (−1.5V/1.5V) along with 20 K pulsative endurance at RT and 10⁵ s retention at 85 °C. We have also described the diffusivity of Silver (Ag) active metal electrode into deposited insulating layers and physics behind BRS and RRS dynamics in fabricated device.