@inproceedings{b8f52e56c4bf4e74916bb4887aefa39c,
title = "Bipolar resistive switching characteristics in Si3N 4-based RRAM with MIS (Metal-Insulator-Silicon) structure",
abstract = "In this paper, bipolar resistive switching was investigated in our fabricated Ti/Si3N4/p+-Si resistive random access memory (RRAM) devices. Heavily doped p-type Si was used instead of a conventional bottom electrode (BE) using metal such as Pt. We found that forming-free process, self-compliance and gradual reset were shown in this device. The operation voltage was with 1.8∼3.5 V during set process due to forming-free process. And self-compliance was observed by restriction of parasitic resistance without external current limiter. Finally, multi-level cell (MLC) feasibility was achieved using voltage stop during gradual reset.",
keywords = "MIS structure), SiN based RRAM",
author = "Sungjun Kim and Sunghun Jung and Oh, {Jeong Hoon} and Ryoo, {Kyung Chang} and Park, {Byung Gook}",
year = "2013",
doi = "10.1109/INEC.2013.6466030",
language = "English",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "303--305",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}