Bipolar resistive switching of solution processed TiO2-graphene oxide nanocomposite for nonvolatile memory applications

V. Senthilkumar, A. Kathalingam, S. Valanarasu, V. Kannan, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

In this study, we report the observation of memory effect in TiO 2-GO nanocomposite films. Electrical properties of the prepared Al/TiO2-GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO2-GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO2 matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 105 cycles and long retention time more than 5×103 s.

Original languageEnglish
Pages (from-to)2432-2435
Number of pages4
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume377
Issue number37
DOIs
StatePublished - 8 Nov 2013

Keywords

  • Electrical properties
  • Resistive Switching
  • Spin coating
  • Thin films

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