Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

Hee Dong Kim; Ho Myoung An; Yun Mo Sung; Hyunsik Im; Tae Geun Kim

doi:10.1109/TDMR.2012.2237404

Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

Hee Dong Kim
, Ho Myoung An
, Yun Mo Sung
, Hyunsik Im
, Tae Geun Kim

Division of System Semiconductor

Korea University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10⁴. The device also showed an endurance of > 10⁹ cycles and a retention time of > 10 ⁴s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

Original language	English
Article number	6403533
Pages (from-to)	252-257
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2012.2237404
State	Published - 2013

Keywords

Atomic force microscopy (AFM)
resistive switching (RS)
SCLC
ZrN

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10.1109/TDMR.2012.2237404

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title = "Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells",

abstract = "This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.",

keywords = "Atomic force microscopy (AFM), resistive switching (RS), SCLC, ZrN",

author = "Kim, \{Hee Dong\} and An, \{Ho Myoung\} and Sung, \{Yun Mo\} and Hyunsik Im and Kim, \{Tae Geun\}",

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T1 - Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Sung, Yun Mo

AU - Im, Hyunsik

AU - Kim, Tae Geun

PY - 2013

Y1 - 2013

N2 - This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

AB - This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

KW - Atomic force microscopy (AFM)

KW - resistive switching (RS)

KW - SCLC

KW - ZrN

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DO - 10.1109/TDMR.2012.2237404

M3 - Article

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SN - 1530-4388

VL - 13

SP - 252

EP - 257

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

M1 - 6403533

ER -

Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

Abstract

Keywords

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