Block utilization-aware buffer replacement scheme for mobile NAND flash storage

Dong Hyun Kang; Changwoo Min; Young Ik Eom

doi:10.1587/transinf.2014EDL8021

Block utilization-aware buffer replacement scheme for mobile NAND flash storage

Dong Hyun Kang, Changwoo Min, Young Ik Eom

Department of Computer Science and Artificial Intelligence

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.

Original language	English
Pages (from-to)	2510-2513
Number of pages	4
Journal	IEICE Transactions on Information and Systems
Volume	E97-D
Issue number	9
DOIs	https://doi.org/10.1587/transinf.2014EDL8021
State	Published - Sep 2014

Keywords

Buffer replacement scheme
Mobile devices
NAND flash storage

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10.1587/transinf.2014EDL8021

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@article{213c680a5bcf4fa58e76bf9775faddc2,

title = "Block utilization-aware buffer replacement scheme for mobile NAND flash storage",

abstract = "NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.",

keywords = "Buffer replacement scheme, Mobile devices, NAND flash storage",

author = "Kang, {Dong Hyun} and Changwoo Min and Eom, {Young Ik}",

year = "2014",

month = sep,

doi = "10.1587/transinf.2014EDL8021",

language = "English",

volume = "E97-D",

pages = "2510--2513",

journal = "IEICE Transactions on Information and Systems",

issn = "0916-8532",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "9",

}

TY - JOUR

T1 - Block utilization-aware buffer replacement scheme for mobile NAND flash storage

AU - Kang, Dong Hyun

AU - Min, Changwoo

AU - Eom, Young Ik

PY - 2014/9

Y1 - 2014/9

N2 - NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.

AB - NAND flash storage devices, such as eMMCs and microSD cards, are now widely used in mobile devices. In this paper, we propose a novel buffer replacement scheme for mobile NAND flash storages. It efficiently improves write performance by evicting pages flash-friendly and maintains high cache hit ratios by managing pages in order of recency. Our experimental results show that the proposed scheme outperforms the best performing scheme in the recent literature, Sp.Clock, by 48%.

KW - Buffer replacement scheme

KW - Mobile devices

KW - NAND flash storage

UR - http://www.scopus.com/inward/record.url?scp=84906902052&partnerID=8YFLogxK

U2 - 10.1587/transinf.2014EDL8021

DO - 10.1587/transinf.2014EDL8021

M3 - Article

AN - SCOPUS:84906902052

SN - 0916-8532

VL - E97-D

SP - 2510

EP - 2513

JO - IEICE Transactions on Information and Systems

JF - IEICE Transactions on Information and Systems

IS - 9

ER -

Block utilization-aware buffer replacement scheme for mobile NAND flash storage

Abstract

Keywords

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