Bonding silicon-on-insulator to glass wafers for integrated bio-electronic circuits

Hyun S. Kim; Robert H. Blick; D. M. Kim; C. B. Eom

doi:10.1063/1.1794855

Bonding silicon-on-insulator to glass wafers for integrated bio-electronic circuits

Hyun S. Kim
, Robert H. Blick
, D. M. Kim
, C. B. Eom

Department of Electronics & Electrical Engineering

2205 Engineering Hall

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A method for anodic bonding of silicon on insulator (SOI) and glass wafers was presented. The surfaces to be bonded were cleaned by a combined ozone and UV cleaning step followed by mega-sonic DI water rinse. Bonding of SOI to glass at an applied voltage of 700 V was observed at a temperature of 400°C. The quality of bonding was also verified. Removal of the bulk silicon substrate was demonstrated, opening up new avenues for the integration of thin film electronics and inert materials for applications in bio-electronics.

Original language	English
Pages (from-to)	2370-2372
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	12
DOIs	https://doi.org/10.1063/1.1794855
State	Published - 20 Sep 2004

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abstract = "A method for anodic bonding of silicon on insulator (SOI) and glass wafers was presented. The surfaces to be bonded were cleaned by a combined ozone and UV cleaning step followed by mega-sonic DI water rinse. Bonding of SOI to glass at an applied voltage of 700 V was observed at a temperature of 400°C. The quality of bonding was also verified. Removal of the bulk silicon substrate was demonstrated, opening up new avenues for the integration of thin film electronics and inert materials for applications in bio-electronics.",

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AB - A method for anodic bonding of silicon on insulator (SOI) and glass wafers was presented. The surfaces to be bonded were cleaned by a combined ozone and UV cleaning step followed by mega-sonic DI water rinse. Bonding of SOI to glass at an applied voltage of 700 V was observed at a temperature of 400°C. The quality of bonding was also verified. Removal of the bulk silicon substrate was demonstrated, opening up new avenues for the integration of thin film electronics and inert materials for applications in bio-electronics.

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Bonding silicon-on-insulator to glass wafers for integrated bio-electronic circuits

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