TY - JOUR
T1 - Bright and Stable Light-Emitting Diodes Based on Perovskite Quantum Dots in Perovskite Matrix
AU - Liu, Yuan
AU - Dong, Yitong
AU - Zhu, Tong
AU - Ma, Dongxin
AU - Proppe, Andrew
AU - Chen, Bin
AU - Zheng, Chao
AU - Hou, Yi
AU - Lee, Seungjin
AU - Sun, Bin
AU - Jung, Eui Hyuk
AU - Yuan, Fanglong
AU - Wang, Ya Kun
AU - Sagar, Laxmi Kishore
AU - Hoogland, Sjoerd
AU - García De Arquer, F. Pelayo
AU - Choi, Min Jae
AU - Singh, Kamalpreet
AU - Kelley, Shana O.
AU - Voznyy, Oleksandr
AU - Lu, Zheng Hong
AU - Sargent, Edward H.
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/9/29
Y1 - 2021/9/29
N2 - Light-emitting diodes (LEDs) based on metal halide perovskite quantum dots (QDs) have achieved impressive external quantum efficiencies; however, the lack of surface protection of QDs, combined with efficiency droop, decreases device operating lifetime at brightnesses of interest. The epitaxial incorporation of QDs within a semiconducting shell provides surface passivation and exciton confinement. Achieving this goal in the case of perovskite QDs remains an unsolved challenge in view of the materials' chemical instability. Here, we report perovskite QDs that remain stable in a thin layer of precursor solution of perovskite, and we use strained QDs as nucleation centers to drive the homogeneous crystallization of a perovskite matrix. Type-I band alignment ensures that the QDs are charge acceptors and radiative emitters. The new materials show suppressed Auger bi-excition recombination and bright luminescence at high excitation (600 W cm-2), whereas control materials exhibit severe bleaching. Primary red LEDs based on the new materials show an external quantum efficiency of 18%, and these retain high performance to brightnesses exceeding 4700 cd m-2. The new materials enable LEDs having an operating half-life of 2400 h at an initial luminance of 100 cd m-2, representing a 100-fold enhancement relative to the best primary red perovskite LEDs.
AB - Light-emitting diodes (LEDs) based on metal halide perovskite quantum dots (QDs) have achieved impressive external quantum efficiencies; however, the lack of surface protection of QDs, combined with efficiency droop, decreases device operating lifetime at brightnesses of interest. The epitaxial incorporation of QDs within a semiconducting shell provides surface passivation and exciton confinement. Achieving this goal in the case of perovskite QDs remains an unsolved challenge in view of the materials' chemical instability. Here, we report perovskite QDs that remain stable in a thin layer of precursor solution of perovskite, and we use strained QDs as nucleation centers to drive the homogeneous crystallization of a perovskite matrix. Type-I band alignment ensures that the QDs are charge acceptors and radiative emitters. The new materials show suppressed Auger bi-excition recombination and bright luminescence at high excitation (600 W cm-2), whereas control materials exhibit severe bleaching. Primary red LEDs based on the new materials show an external quantum efficiency of 18%, and these retain high performance to brightnesses exceeding 4700 cd m-2. The new materials enable LEDs having an operating half-life of 2400 h at an initial luminance of 100 cd m-2, representing a 100-fold enhancement relative to the best primary red perovskite LEDs.
UR - http://www.scopus.com/inward/record.url?scp=85116523923&partnerID=8YFLogxK
U2 - 10.1021/jacs.1c02148
DO - 10.1021/jacs.1c02148
M3 - Article
C2 - 34542273
AN - SCOPUS:85116523923
SN - 0002-7863
VL - 143
SP - 15606
EP - 15615
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 38
ER -