BST interdigital capacitors with high tunability on MgO substrate

Ki Byoung Kim; Tae Soon Yun; Ran Young Kim; Hyun Suk Kim; Ho Gi Kim; Jong Chul Lee

doi:10.1002/mop.20709

BST interdigital capacitors with high tunability on MgO substrate

Ki Byoung Kim, Tae Soon Yun, Ran Young Kim, Hyun Suk Kim, Ho Gi Kim, Jong Chul Lee

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this paper, Au/Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/mop.20709
State	Published - 5 Apr 2005

Keywords

BaSrTiO
Ferroelectric
Interdigital capacitor
Tunable capacitor

Access to Document

10.1002/mop.20709

Cite this

@article{a58f9eb3b64b42f9815f29ad5f4722e2,

title = "BST interdigital capacitors with high tunability on MgO substrate",

abstract = "In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.",

keywords = "BaSrTiO, Ferroelectric, Interdigital capacitor, Tunable capacitor",

author = "Kim, {Ki Byoung} and Yun, {Tae Soon} and Kim, {Ran Young} and Kim, {Hyun Suk} and Kim, {Ho Gi} and Lee, {Jong Chul}",

year = "2005",

month = apr,

day = "5",

doi = "10.1002/mop.20709",

language = "English",

volume = "45",

pages = "15--18",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

number = "1",

}

TY - JOUR

T1 - BST interdigital capacitors with high tunability on MgO substrate

AU - Kim, Ki Byoung

AU - Yun, Tae Soon

AU - Kim, Ran Young

AU - Kim, Hyun Suk

AU - Kim, Ho Gi

AU - Lee, Jong Chul

PY - 2005/4/5

Y1 - 2005/4/5

N2 - In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

AB - In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

KW - BaSrTiO

KW - Ferroelectric

KW - Interdigital capacitor

KW - Tunable capacitor

UR - http://www.scopus.com/inward/record.url?scp=17444429688&partnerID=8YFLogxK

U2 - 10.1002/mop.20709

DO - 10.1002/mop.20709

M3 - Article

AN - SCOPUS:17444429688

SN - 0895-2477

VL - 45

SP - 15

EP - 18

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 1

ER -

BST interdigital capacitors with high tunability on MgO substrate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this