BST interdigital capacitors with high tunability on MgO substrate

Ki Byoung Kim; Tae Soon Yun; Ran Young Kim; Hyun Suk Kim; Ho Gi Kim; Jong Chul Lee

doi:10.1002/mop.20709

BST interdigital capacitors with high tunability on MgO substrate

Ki Byoung Kim
, Tae Soon Yun
, Ran Young Kim
, Hyun Suk Kim
, Ho Gi Kim
, Jong Chul Lee

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this paper, Au/Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/mop.20709
State	Published - 5 Apr 2005

Keywords

BaSrTiO
Ferroelectric
Interdigital capacitor
Tunable capacitor

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10.1002/mop.20709

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title = "BST interdigital capacitors with high tunability on MgO substrate",

abstract = "In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2\% and 28\% are obtained for the undoped BST thin film and the Mn-doped (3 mol \%) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol \%) BST film is suggested to be an effective candidate for high-performance tunable device applications.",

keywords = "BaSrTiO, Ferroelectric, Interdigital capacitor, Tunable capacitor",

author = "Kim, \{Ki Byoung\} and Yun, \{Tae Soon\} and Kim, \{Ran Young\} and Kim, \{Hyun Suk\} and Kim, \{Ho Gi\} and Lee, \{Jong Chul\}",

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doi = "10.1002/mop.20709",

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T1 - BST interdigital capacitors with high tunability on MgO substrate

AU - Kim, Ki Byoung

AU - Yun, Tae Soon

AU - Kim, Ran Young

AU - Kim, Hyun Suk

AU - Kim, Ho Gi

AU - Lee, Jong Chul

PY - 2005/4/5

Y1 - 2005/4/5

N2 - In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

AB - In this paper, Au/Ba0.6Sr0.4TiO3 (BST) ferroelectric thin-film interdigital capacitors on MgO substrate are presented. The interdigital capacitors with a 50-μm gap and different doped materials of BST thin film are characterized. Tunability rates of 11.2% and 28% are obtained for the undoped BST thin film and the Mn-doped (3 mol %) BST thin film, respectively, at 3.5 GHz with a bias voltage of 20 V. Furthermore, the loss tangent of the BST thin film is found to be approximately 0.0158 and it decreases with Mn doping. Mn-doped (3 mol %) BST film is suggested to be an effective candidate for high-performance tunable device applications.

KW - BaSrTiO

KW - Ferroelectric

KW - Interdigital capacitor

KW - Tunable capacitor

UR - https://www.scopus.com/pages/publications/17444429688

U2 - 10.1002/mop.20709

DO - 10.1002/mop.20709

M3 - Article

AN - SCOPUS:17444429688

SN - 0895-2477

VL - 45

SP - 15

EP - 18

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 1

ER -

BST interdigital capacitors with high tunability on MgO substrate

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