Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Youngsin Park, Christopher C.S. Chan, Robert A. Taylor, Nammee Kim, Yongcheol Jo, Seung W. Lee, Woochul Yang, Hyunsik Im

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.

Original languageEnglish
Pages (from-to)365-369
Number of pages5
JournalOptical Materials
Volume78
DOIs
StatePublished - Apr 2018

Keywords

  • InGaN/GaN quantum disk
  • Photoluminescence
  • Quantum confined Stark Effect

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