Cathodoluminescence and photoluminescence of crystaline silicon-epilayer grown on Si+-implanted (1-102) sapphire

C. J. Park, Y. H. Kwon, T. W. Kang, H. Y. Cho, S. H. Choi, R. G. Elliman

Research output: Contribution to journalConference articlepeer-review

Abstract

Luminescence on Si-epitaxial layers grown on Si-implated Al2O3 (11̄02) with 30 kev Si+ to a dose of 5×1015/cm2 has been investigated. To active the implanted Si+ ions in Al2O3, the post annealing was performed at 1100°C in Ar ambiant. Also, cathodoluminescence (CL) and photoluminescence (PL) have been used to study struc Al2O3tural and optical properties of nc-Si in the Si+-implanted (11̄02) Al2O3 substrates. In the PL and CL spectra for Si+-implanted samples, peaks to be responsible for nanocrystalline-Si (nc-Si) appear at 316 nm (3.92 eV) and 574 nm (2.16 eV), respectively. The crystallinity of nc-Si imbeded in Al2O3 has been about 5nm in size and the dislocation aligned parallel to the (0001) planes of (11̄02) Al2O3, confirmed by transmission electron microscopy (TEM).

Original languageEnglish
Pages (from-to)245-250
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume722
DOIs
StatePublished - 2002
EventMaterials and Devices for Optoelectronics and Microphotonics - San Francisco, CA, United States
Duration: 1 Apr 20025 Apr 2002

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