Characteristics of ballistic tansport in short-channel MOSFETs

The Si MOSFET is the single most important unit of any digital or analog circuit today. As it is scaled down to the nanometer region, charge carriers (electrons and holes) in the channel are expected to flow with fewer scattering events, leading to ballistic transport. In this work, the characteristics of the quasi-ballistic MOSFET are systematically investigated by taking into account scattering phenomena of the carriers. For a practical viewpoint, a conventional MOSFET structure is exploited. Numerical calculations of potential profile are carried out, in order to understand and quantify the transport as functions of gate and drain voltages under various conditions.