Characteristics of diluted magnetic semiconductor for p-type InMnP: ZZZn epilayer

Yoon Shon; H. C. Jeon; Y. S. Park; Sejoon Lee; Y. H. Kwon; Seung Joo Lee; D. Y. Kim; H. S. Kim; T. W. Kang; Y. J. Park; Chong S. Yoon; Chang Kyung Kim; E. K. Kim; Yongmin Kim; Y. D. Woo

doi:10.1016/j.tsf.2005.10.026

Characteristics of diluted magnetic semiconductor for p-type InMnP: ZZZn epilayer

Yoon Shon, H. C. Jeon, Y. S. Park, Sejoon Lee, Y. H. Kwon, Seung Joo Lee, D. Y. Kim, H. S. Kim, T. W. Kang, Y. J. Park, Chong S. Yoon, Chang Kyung Kim, E. K. Kim, Yongmin Kim, Y. D. Woo

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Thin Solid Films
Volume	505
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.10.026
State	Published - 18 May 2006

Keywords

InMnP : Zn epilayer
MBE
MOCVD

Access to Document

10.1016/j.tsf.2005.10.026

Cite this

@article{e237794a325e4839a35146e952aa3c1c,

title = "Characteristics of diluted magnetic semiconductor for p-type InMnP: ZZZn epilayer",

abstract = "p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K.",

keywords = "InMnP : Zn epilayer, MBE, MOCVD",

author = "Yoon Shon and Jeon, {H. C.} and Park, {Y. S.} and Sejoon Lee and Kwon, {Y. H.} and Lee, {Seung Joo} and Kim, {D. Y.} and Kim, {H. S.} and Kang, {T. W.} and Park, {Y. J.} and Yoon, {Chong S.} and Kim, {Chang Kyung} and Kim, {E. K.} and Yongmin Kim and Woo, {Y. D.}",

year = "2006",

month = may,

day = "18",

doi = "10.1016/j.tsf.2005.10.026",

language = "English",

volume = "505",

pages = "129--132",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Characteristics of diluted magnetic semiconductor for p-type InMnP

T2 - ZZZn epilayer

AU - Shon, Yoon

AU - Jeon, H. C.

AU - Park, Y. S.

AU - Lee, Sejoon

AU - Kwon, Y. H.

AU - Lee, Seung Joo

AU - Kim, D. Y.

AU - Kim, H. S.

AU - Kang, T. W.

AU - Park, Y. J.

AU - Yoon, Chong S.

AU - Kim, Chang Kyung

AU - Kim, E. K.

AU - Kim, Yongmin

AU - Woo, Y. D.

PY - 2006/5/18

Y1 - 2006/5/18

N2 - p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K.

AB - p-type InP : Zn epilayers were prepared by metal-organic chemical vapor deposition and subsequently doped with Mn by heat treatment after evaporation of a thin film of Mn on top of the InP : Zn epilayer using a molecular-beam epitaxy system. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP : Zn epilayer was found, and single-phased InMnP : Zn epilayer was well formed. The results of photoluminescence measurements showed that the optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP : Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the sample with 3% Mn maintained the ferromagnetic behavior up to 370 K.

KW - InMnP : Zn epilayer

KW - MBE

KW - MOCVD

UR - http://www.scopus.com/inward/record.url?scp=33644891046&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.10.026

DO - 10.1016/j.tsf.2005.10.026

M3 - Article

AN - SCOPUS:33644891046

SN - 0040-6090

VL - 505

SP - 129

EP - 132

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Characteristics of diluted magnetic semiconductor for p-type InMnP: ZZZn epilayer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this