Characteristics of GaMnN based ferromagnetic resonant tunneling diode without external magnetic field

M. K. Li, N. M. Kim, S. J. Lee, H. C. Jeon, T. W. Kang

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16 Scopus citations

Abstract

Achievement of a spin polarization without magnetic field through a GaMnN based ferromagnetic resonant tunneling diode (RTD) is proposed theoretically. The influences of the temperature and structure on the spin polarization current and differential conductance have been investigated. The clear spin splitting current can be observed in an optimal RTD structure without magnetic field even though the splitting energy of the ferromagnetic barrier is very small. Large spin polarization can be obtained and the polarization orientation can be varied by an applied bias voltage without external magnetic field.

Original languageEnglish
Article number162102
JournalApplied Physics Letters
Volume88
Issue number16
DOIs
StatePublished - 17 Apr 2006

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