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Characteristics of indium tin zinc oxide thin film transistors with plastic substrates
Dae Gyu Yang
, Hyoung Do Kim
, Jong Heon Kim
,
Hyun Suk Kim
Department of Energy and Materials Engineering
Chungnam National University
Research output
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peer-review
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Material Science
Thin-Film Transistor
100%
Zinc Oxide
100%
Indium
100%
Tin
100%
Oxygen Vacancy
40%
Polyimide
40%
X-Ray Photoelectron Spectroscopy
20%
Oxide Compound
20%
Plasma-Enhanced Chemical Vapor Deposition
20%
Al2O3
20%
Buffer Layer
20%
Electrical Property
20%
Secondary Ion Mass Spectrometry
20%
Physics
Zinc Oxide
100%
Thin Films
100%
Indium
100%
Oxygen Vacancy
40%
Vapor Deposition
20%
X Ray Spectroscopy
20%
Blood Plasma
20%
Engineering
Thin-Film Transistor
100%
Oxygen Vacancy
50%
Chemical Vapor Deposition
25%
Vapor Deposition
25%
Ray Photoelectron Spectroscopy
25%
Buffer Layer
25%
Gate Oxide
25%