Characteristics of molecular beam epitaxy-grown GaFeAs

Y. J. Park; H. T. Oh; C. J. Park; H. Y. Cho; Y. Shon; E. K. Kim; R. Moriya; H. Munekata

doi:10.1016/S1567-1739(02)00144-X

Characteristics of molecular beam epitaxy-grown GaFeAs

Y. J. Park, H. T. Oh, C. J. Park, H. Y. Cho, Y. Shon, E. K. Kim, R. Moriya, H. Munekata

Department of Physics

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Abstract

Diluted magnetic semiconductors GaFeAs were grown by molecular beam epitaxy and characterized. Ga_1-xFe_xAs ternary alloys were obtained at the growth temperature T_s = 200 °C ranging from x = 0:005 to 0.03. The effects of thermal treatment on behaviors of defects, affecting to the magnetic properties of GaFeAs layer were particularly elucidated. As-grown samples were annealed at temperatures varying from 400 to 600 °C. From the measurement of double crystal X-ray diffraction, we observed Fe-related peak which shifted to a higher diffraction angle as the Fe content increased, indicating that the lattice constant decreases with increasing Fe content. In contrast, above the annealing temperature 500 °C, the lattice constant becomes smaller than that of GaAs. Using the deep level transient spectroscopy, various defects in GaFeAs layer were observed and identified in conjunction with magnetic properties.

Original language	English
Pages (from-to)	379-382
Number of pages	4
Journal	Current Applied Physics
Volume	2
Issue number	5
DOIs	https://doi.org/10.1016/S1567-1739(02)00144-X
State	Published - Oct 2002

Keywords

Deep level transient spectroscopy
Diluted magnetic semiconductors
Ferromagnetic ion
Native defects

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10.1016/S1567-1739(02)00144-X

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title = "Characteristics of molecular beam epitaxy-grown GaFeAs",

abstract = "Diluted magnetic semiconductors GaFeAs were grown by molecular beam epitaxy and characterized. Ga1-xFexAs ternary alloys were obtained at the growth temperature Ts = 200 °C ranging from x = 0:005 to 0.03. The effects of thermal treatment on behaviors of defects, affecting to the magnetic properties of GaFeAs layer were particularly elucidated. As-grown samples were annealed at temperatures varying from 400 to 600 °C. From the measurement of double crystal X-ray diffraction, we observed Fe-related peak which shifted to a higher diffraction angle as the Fe content increased, indicating that the lattice constant decreases with increasing Fe content. In contrast, above the annealing temperature 500 °C, the lattice constant becomes smaller than that of GaAs. Using the deep level transient spectroscopy, various defects in GaFeAs layer were observed and identified in conjunction with magnetic properties.",

keywords = "Deep level transient spectroscopy, Diluted magnetic semiconductors, Ferromagnetic ion, Native defects",

author = "Park, {Y. J.} and Oh, {H. T.} and Park, {C. J.} and Cho, {H. Y.} and Y. Shon and Kim, {E. K.} and R. Moriya and H. Munekata",

year = "2002",

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language = "English",

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journal = "Current Applied Physics",

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TY - JOUR

T1 - Characteristics of molecular beam epitaxy-grown GaFeAs

AU - Park, Y. J.

AU - Oh, H. T.

AU - Park, C. J.

AU - Cho, H. Y.

AU - Shon, Y.

AU - Kim, E. K.

AU - Moriya, R.

AU - Munekata, H.

PY - 2002/10

Y1 - 2002/10

N2 - Diluted magnetic semiconductors GaFeAs were grown by molecular beam epitaxy and characterized. Ga1-xFexAs ternary alloys were obtained at the growth temperature Ts = 200 °C ranging from x = 0:005 to 0.03. The effects of thermal treatment on behaviors of defects, affecting to the magnetic properties of GaFeAs layer were particularly elucidated. As-grown samples were annealed at temperatures varying from 400 to 600 °C. From the measurement of double crystal X-ray diffraction, we observed Fe-related peak which shifted to a higher diffraction angle as the Fe content increased, indicating that the lattice constant decreases with increasing Fe content. In contrast, above the annealing temperature 500 °C, the lattice constant becomes smaller than that of GaAs. Using the deep level transient spectroscopy, various defects in GaFeAs layer were observed and identified in conjunction with magnetic properties.

AB - Diluted magnetic semiconductors GaFeAs were grown by molecular beam epitaxy and characterized. Ga1-xFexAs ternary alloys were obtained at the growth temperature Ts = 200 °C ranging from x = 0:005 to 0.03. The effects of thermal treatment on behaviors of defects, affecting to the magnetic properties of GaFeAs layer were particularly elucidated. As-grown samples were annealed at temperatures varying from 400 to 600 °C. From the measurement of double crystal X-ray diffraction, we observed Fe-related peak which shifted to a higher diffraction angle as the Fe content increased, indicating that the lattice constant decreases with increasing Fe content. In contrast, above the annealing temperature 500 °C, the lattice constant becomes smaller than that of GaAs. Using the deep level transient spectroscopy, various defects in GaFeAs layer were observed and identified in conjunction with magnetic properties.

KW - Deep level transient spectroscopy

KW - Diluted magnetic semiconductors

KW - Ferromagnetic ion

KW - Native defects

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U2 - 10.1016/S1567-1739(02)00144-X

DO - 10.1016/S1567-1739(02)00144-X

M3 - Article

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SN - 1567-1739

VL - 2

SP - 379

EP - 382

JO - Current Applied Physics

JF - Current Applied Physics

IS - 5

ER -

Characteristics of molecular beam epitaxy-grown GaFeAs

Abstract

Keywords

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