Characteristics of poly-Si TFTs fabricated on flexible substrates using sputter deposited a-Si films

Y. H. Kim; D. G. Moon; W. K. Kim; J. I. Han

Characteristics of poly-Si TFTs fabricated on flexible substrates using sputter deposited a-Si films

Y. H. Kim, D. G. Moon, W. K. Kim, J. I. Han

Department of Chemical and Biochemical Engineering

Korea Electronics Technology Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 32.4 cm²/V·s and on/off ratio of 10⁶.

Original language	English
Pages (from-to)	297-300
Number of pages	4
Journal	Proceedings of International Meeting on Information Display
Volume	1
State	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 19 Jul 2005 → 23 Jul 2005

Cite this

@article{f48555d0b30d460db93b0471992824e7,

title = "Characteristics of poly-Si TFTs fabricated on flexible substrates using sputter deposited a-Si films",

abstract = "The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 32.4 cm2/V·s and on/off ratio of 106.",

author = "Kim, {Y. H.} and Moon, {D. G.} and Kim, {W. K.} and Han, {J. I.}",

year = "2006",

language = "English",

volume = "1",

pages = "297--300",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - Characteristics of poly-Si TFTs fabricated on flexible substrates using sputter deposited a-Si films

AU - Kim, Y. H.

AU - Moon, D. G.

AU - Kim, W. K.

AU - Han, J. I.

PY - 2006

Y1 - 2006

N2 - The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 32.4 cm2/V·s and on/off ratio of 106.

AB - The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 32.4 cm2/V·s and on/off ratio of 106.

UR - http://www.scopus.com/inward/record.url?scp=33847404592&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847404592

SN - 1738-7558

VL - 1

SP - 297

EP - 300

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

Characteristics of poly-Si TFTs fabricated on flexible substrates using sputter deposited a-Si films

Abstract

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