Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn+ (5 and 10 at.%)

Yoon Shon, Sejoon Lee, Tae Won Kang, Eun Kyu Kim, Jeoung Ju Lee

Research output: Contribution to journalArticlepeer-review

Abstract

GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mn3Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The TC of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).

Original languageEnglish
Pages (from-to)3241-3245
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number6
DOIs
StatePublished - Dec 2008

Keywords

  • MBE
  • Mg-codoping
  • Mn+-implanted gamnn
  • MOCVD

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