Abstract
GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mn3Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The TC of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).
Original language | English |
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Pages (from-to) | 3241-3245 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2008 |
Keywords
- MBE
- Mg-codoping
- Mn+-implanted gamnn
- MOCVD