Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn+ (5 and 10 at.%)

Yoon Shon; Sejoon Lee; Tae Won Kang; Eun Kyu Kim; Jeoung Ju Lee

doi:10.3938/jkps.53.3241

Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn⁺ (5 and 10 at.%)

Yoon Shon
, Sejoon Lee
, Tae Won Kang
, Eun Kyu Kim
, Jeoung Ju Lee

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

Abstract

GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga_5.2Mn and Mn₃Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga_5.2Mn and Mn₃Ga at higher temperatures (above 300 K). The T_C of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).

Original language	English
Pages (from-to)	3241-3245
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	6
DOIs	https://doi.org/10.3938/jkps.53.3241
State	Published - Dec 2008

Keywords

MBE
Mg-codoping
Mn+-implanted gamnn
MOCVD

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10.3938/jkps.53.3241

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title = "Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn+ (5 and 10 at.\%)",

abstract = "GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.\% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mn3Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The TC of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).",

keywords = "MBE, Mg-codoping, Mn+-implanted gamnn, MOCVD",

author = "Yoon Shon and Sejoon Lee and Kang, \{Tae Won\} and Kim, \{Eun Kyu\} and Lee, \{Jeoung Ju\}",

year = "2008",

month = dec,

doi = "10.3938/jkps.53.3241",

language = "English",

volume = "53",

pages = "3241--3245",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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}

TY - JOUR

T1 - Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn+ (5 and 10 at.%)

AU - Shon, Yoon

AU - Lee, Sejoon

AU - Kang, Tae Won

AU - Kim, Eun Kyu

AU - Lee, Jeoung Ju

PY - 2008/12

Y1 - 2008/12

N2 - GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mn3Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The TC of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).

AB - GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mn3Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75∼ 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The TC of GaMnN for Mg-codoped GaMnN (∼100 K) was observed to be higher than that for undoped GaMnN (∼75 K).

KW - MBE

KW - Mg-codoping

KW - Mn+-implanted gamnn

KW - MOCVD

UR - https://www.scopus.com/pages/publications/58249102847

U2 - 10.3938/jkps.53.3241

DO - 10.3938/jkps.53.3241

M3 - Article

AN - SCOPUS:58249102847

SN - 0374-4884

VL - 53

SP - 3241

EP - 3245

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Characteristics of simultaneous studies of both undoped and p-type GaN implanted with Mn⁺ (5 and 10 at.%)

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Keywords

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