Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers

Dae Gyu Park; Tae Ho Cha; Sang Hyeob Lee; In Seok Yeo; Jin Won Park; Sam Dong Kim

doi:10.1116/1.1421567

Characteristics of sputtered Ti_1-xAl_xN films for storage node electrode barriers

Dae Gyu Park
, Tae Ho Cha
, Sang Hyeob Lee
, In Seok Yeo
, Jin Won Park
, Sam Dong Kim

Department of Electronics & Electrical Engineering

SK Corporation
Novellus Systems Inc.

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

TiAlN films were deposited as storage node electrode barriers of metal-insulator-metal (MIM) capacitors for comparison with TiN. TiAlN films deposited at high T_s (450°C) showed lower resistivity than those prepared at low T_s (∼100°C) due to the larger grain size with a (200) texture and low [0]. The electrical characteristics of Pt/BST/Pt MIM capacitors on the TiAlN films at low T_s were superior to those on the TiN barriers in terms of smallest t_ox, lower than δ, and I_L. Hillock-induced BST bulge and local thinning with DIA over 650°C was observed.

Original language	English
Pages (from-to)	2289-2294
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1421567
State	Published - Nov 2001

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10.1116/1.1421567

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title = "Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers",

abstract = "TiAlN films were deposited as storage node electrode barriers of metal-insulator-metal (MIM) capacitors for comparison with TiN. TiAlN films deposited at high Ts (450°C) showed lower resistivity than those prepared at low Ts (∼100°C) due to the larger grain size with a (200) texture and low [0]. The electrical characteristics of Pt/BST/Pt MIM capacitors on the TiAlN films at low Ts were superior to those on the TiN barriers in terms of smallest tox, lower than δ, and IL. Hillock-induced BST bulge and local thinning with DIA over 650°C was observed.",

author = "Park, \{Dae Gyu\} and Cha, \{Tae Ho\} and Lee, \{Sang Hyeob\} and Yeo, \{In Seok\} and Park, \{Jin Won\} and Kim, \{Sam Dong\}",

year = "2001",

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doi = "10.1116/1.1421567",

language = "English",

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T1 - Characteristics of sputtered Ti1-xAlxN films for storage node electrode barriers

AU - Park, Dae Gyu

AU - Cha, Tae Ho

AU - Lee, Sang Hyeob

AU - Yeo, In Seok

AU - Park, Jin Won

AU - Kim, Sam Dong

PY - 2001/11

Y1 - 2001/11

N2 - TiAlN films were deposited as storage node electrode barriers of metal-insulator-metal (MIM) capacitors for comparison with TiN. TiAlN films deposited at high Ts (450°C) showed lower resistivity than those prepared at low Ts (∼100°C) due to the larger grain size with a (200) texture and low [0]. The electrical characteristics of Pt/BST/Pt MIM capacitors on the TiAlN films at low Ts were superior to those on the TiN barriers in terms of smallest tox, lower than δ, and IL. Hillock-induced BST bulge and local thinning with DIA over 650°C was observed.

AB - TiAlN films were deposited as storage node electrode barriers of metal-insulator-metal (MIM) capacitors for comparison with TiN. TiAlN films deposited at high Ts (450°C) showed lower resistivity than those prepared at low Ts (∼100°C) due to the larger grain size with a (200) texture and low [0]. The electrical characteristics of Pt/BST/Pt MIM capacitors on the TiAlN films at low Ts were superior to those on the TiN barriers in terms of smallest tox, lower than δ, and IL. Hillock-induced BST bulge and local thinning with DIA over 650°C was observed.

UR - https://www.scopus.com/pages/publications/0035519471

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Characteristics of sputtered Ti_1-xAl_xN films for storage node electrode barriers

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