Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

Jae Cheol Shin; Kyoung Jin Choi; Do Yang Kim; Won Jun Choi; Xiuling Li

doi:10.1021/cg300210h

Characteristics of strain-induced in _xGa _1-xas nanowires grown on Si(111) substrates

Jae Cheol Shin
, Kyoung Jin Choi
, Do Yang Kim
, Won Jun Choi
, Xiuling Li

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In _xGa _1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In _xGa _1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In _xGa _1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

Original language	English
Pages (from-to)	2994-2998
Number of pages	5
Journal	Crystal Growth and Design
Volume	12
Issue number	6
DOIs	https://doi.org/10.1021/cg300210h
State	Published - 6 Jun 2012

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10.1021/cg300210h

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title = "Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates",

abstract = "Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.",

author = "Shin, \{Jae Cheol\} and Choi, \{Kyoung Jin\} and Kim, \{Do Yang\} and Choi, \{Won Jun\} and Xiuling Li",

year = "2012",

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doi = "10.1021/cg300210h",

language = "English",

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journal = "Crystal Growth and Design",

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T1 - Characteristics of strain-induced in xGa 1-xas nanowires grown on Si(111) substrates

AU - Shin, Jae Cheol

AU - Choi, Kyoung Jin

AU - Kim, Do Yang

AU - Choi, Won Jun

AU - Li, Xiuling

PY - 2012/6/6

Y1 - 2012/6/6

N2 - Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

AB - Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of In xGa 1-xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor-liquid-solid mechanism, strain-induced In xGa 1-xAs NWs have several unique morphological features including no tapering, slight bending, and composition-dependent NW height saturation. Although small fluctuation exists, no systematic composition variations are observed over the entire In xGa 1-xAs NW length within the resolution of the energy-dispersive X-ray spectroscopy analysis.

UR - https://www.scopus.com/pages/publications/84861919474

U2 - 10.1021/cg300210h

DO - 10.1021/cg300210h

M3 - Article

AN - SCOPUS:84861919474

SN - 1528-7483

VL - 12

SP - 2994

EP - 2998

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 6

ER -

Characteristics of strain-induced in _xGa _1-xas nanowires grown on Si(111) substrates

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