Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO

Engineering

• Heterojunctions 100%
• Interfacial Layer 100%
• Heterostructures 50%
• Ray Diffraction 50%
• High Resolution 50%
• Interface State 50%
• Luminaires 50%
• Metal Organic Chemical Vapor Deposition 50%

Physics

• Heterojunctions 100%
• Single Crystal 50%
• Metalorganic Chemical Vapor Deposition 50%
• Electroluminescence 50%
• Ultraviolet Emission 50%
• High Resolution X-Ray Diffraction 50%

Material Science

• ZnO 100%
• Heterojunction 100%
• Surface (Surface Science) 20%
• Metal-Organic Chemical Vapor Deposition 20%
• Single Crystal 20%
• Electroluminescence 20%