Characteristics of Zn1-xMnxO thin films prepared by RF magnetron sputtering

Doo Soo Kim, Hwa Mok Kim, Shavkat U. Yuldashev, Se Joon Lee, Tae Won Kang, Deuk Young Kim

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

We demonstrate the characteristics of Zn1-xMnxO thin films grown on (0001) Al2O3 substrates using an RF magnetron sputtering system. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental bandgap energy. Prom the results of atomic force microscopy study, we confirmed that the morphology of Zn1-xMnxO was sensitively affected by changing substrate temperature. The curie temperature obtained from temperature-dependent magnetization curves was 70 K for the film with x = 0.07, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.93Mn0.07O at 5 K were 1.2 emu/g and 500 Oe, respectively.

Original languageEnglish
Pages (from-to)S333-S335
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
StatePublished - Feb 2003
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 20 Aug 200223 Aug 2002

Keywords

  • Diluted magnetic semiconductor
  • RF magnetron sputtering
  • Thin film
  • ZnMnO

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