Abstract
We demonstrate the characteristics of Zn1-xMnxO thin films grown on (0001) Al2O3 substrates using an RF magnetron sputtering system. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental bandgap energy. Prom the results of atomic force microscopy study, we confirmed that the morphology of Zn1-xMnxO was sensitively affected by changing substrate temperature. The curie temperature obtained from temperature-dependent magnetization curves was 70 K for the film with x = 0.07, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.93Mn0.07O at 5 K were 1.2 emu/g and 500 Oe, respectively.
Original language | English |
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Pages (from-to) | S333-S335 |
Journal | Journal of the Korean Physical Society |
Volume | 42 |
Issue number | SPEC. |
State | Published - Feb 2003 |
Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002 |
Keywords
- Diluted magnetic semiconductor
- RF magnetron sputtering
- Thin film
- ZnMnO