Characterization of electrodeposited indium doped CdSe thin films

Thin films of CdSe and In:CdSe were deposited onto indium doped tin oxide coated conducting glass (ITO) substrates by electrodeposition technique. The appropriate potential region for the formation of stoichiometric CdSe and In-doped CdSe thin films occurs was found to be-700 mV versus SCE. The structural investigations performed by means of X-ray diffraction (XRD) technique, Scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDS), and optical studies for the determination of structural, morphological, compositional and optical properties. X-ray diffraction shows development of well-crystallized film with hexagonal structure. The parameters such as crystallite size, strain, and dislocation density are calculated from X-ray diffraction studies. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The surface morphology is found to be modified due to doping. The energy dispersive X-rays analysis indicates that the atomic percentage. The films show good optical properties and transmittance study shows the presence of direct transition and a considerable decrease in band gap, Eg 1.7 eV to 1.63 eV.