TY - JOUR
T1 - Characterization of Ni/Ce Co-doped BST thin film grown on LSCO/Pt electrodes prepared by pulsed laser deposition
AU - Kim, Hyun Suk
AU - Kim, Il Doo
AU - Lim, Mi Hwa
AU - Lee, Chi Heon
AU - Kim, Myung Sun
AU - Kim, Ho Gi
PY - 2003
Y1 - 2003
N2 - Perovskite (Ba0.6Sr0.4)TiO3 (BST) thin films doped with Ni, Ce and Ni/Ce codopants were prepared on LSCO/Pt/SiO 2/Si substrates by pulsed laser deposition method. In this study, La0.5Sr0.5CoO3 (LSCO) bottom electrodes were used to improve the crystallinity and dielectric properties of BST films. Single ion doped(1 mol%Ni doped, 1 mol%Ce doped) BST films showed more improved crystallinity, smoother surface, and smaller grain size than that with 1 mol%Ni/1 mol%Ce. The dielectric constant and loss of Ni/Ce co-doped BST films were about 298 and 1.8%, respectively. In addition, tunability and figure of merit of co-doped BST films showed minimum values of approximately 9.3% and 5, respectively. With 1% Ni-doped BST thin films, results gave a tunability of 54.2% and a loss tangent of 1.8% while a figure of merit was 30. Correlation of the material properties with dielectric and tunable properties suggests the 1 mol%Ni-doped BST films are effective potential candidate for tunable device applications.
AB - Perovskite (Ba0.6Sr0.4)TiO3 (BST) thin films doped with Ni, Ce and Ni/Ce codopants were prepared on LSCO/Pt/SiO 2/Si substrates by pulsed laser deposition method. In this study, La0.5Sr0.5CoO3 (LSCO) bottom electrodes were used to improve the crystallinity and dielectric properties of BST films. Single ion doped(1 mol%Ni doped, 1 mol%Ce doped) BST films showed more improved crystallinity, smoother surface, and smaller grain size than that with 1 mol%Ni/1 mol%Ce. The dielectric constant and loss of Ni/Ce co-doped BST films were about 298 and 1.8%, respectively. In addition, tunability and figure of merit of co-doped BST films showed minimum values of approximately 9.3% and 5, respectively. With 1% Ni-doped BST thin films, results gave a tunability of 54.2% and a loss tangent of 1.8% while a figure of merit was 30. Correlation of the material properties with dielectric and tunable properties suggests the 1 mol%Ni-doped BST films are effective potential candidate for tunable device applications.
UR - http://www.scopus.com/inward/record.url?scp=33751273201&partnerID=8YFLogxK
U2 - 10.1080/10584580390259371
DO - 10.1080/10584580390259371
M3 - Article
AN - SCOPUS:33751273201
SN - 1058-4587
VL - 55
SP - 923
EP - 931
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
ER -