Characterization of resistive switching memory devices with tunnel barrier

Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Suhyun Bang, Dong Keun Lee, Yao Feng Chang, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we study the resistive switching characteristics of two different resistive switching memory devices (SiNx and HfOx) with SiO2 tunnel barrier. The switching of the former and the latter is based on the movement of hydrogen ion and oxygen vacancies, respectively. For Cu/SiNx/SiO2/p+-Si device, the operating current is drastically reduced and nonlinearity of LRS is increased compared to without the devices without tunnel barrier. These experiment results demonstrate that the two-types RRAM devices having tunnel barrier is highly suitable for the low-power and high-density memory applications.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-88
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

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