@inproceedings{cb4589a474234801bad27d43ab7955d1,
title = "Characterization of resistive switching memory devices with tunnel barrier",
abstract = "In this work, we study the resistive switching characteristics of two different resistive switching memory devices (SiNx and HfOx) with SiO2 tunnel barrier. The switching of the former and the latter is based on the movement of hydrogen ion and oxygen vacancies, respectively. For Cu/SiNx/SiO2/p+-Si device, the operating current is drastically reduced and nonlinearity of LRS is increased compared to without the devices without tunnel barrier. These experiment results demonstrate that the two-types RRAM devices having tunnel barrier is highly suitable for the low-power and high-density memory applications.",
author = "Sungjun Kim and Kim, {Min Hwi} and Kim, {Tae Hyeon} and Suhyun Bang and Lee, {Dong Keun} and Chang, {Yao Feng} and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242310",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "87--88",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}