Characterization of RF sputter deposited HfAlOx dielectrics for MIM capacitor applications

M. K. Hota, C. Mahata, S. Mallik, B. Majhi, T. Das, C. K. Sarkar, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT-2.1-4.9nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental observations indicate the high potential of HfAlOx for MIM capacitor applications.

Original languageEnglish
Title of host publication2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
DOIs
StatePublished - 2009
Event2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09 - Mumbai, India
Duration: 1 Jun 20092 Jun 2009

Publication series

Name2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09

Conference

Conference2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
Country/TerritoryIndia
CityMumbai
Period1/06/092/06/09

Keywords

  • HfAlO
  • High-k
  • MIM capacitor
  • VCC

Fingerprint

Dive into the research topics of 'Characterization of RF sputter deposited HfAlOx dielectrics for MIM capacitor applications'. Together they form a unique fingerprint.

Cite this