@inproceedings{cd820ff62b8a4faeaaad264ca00c64a6,
title = "Characterization of RF sputter deposited HfAlOx dielectrics for MIM capacitor applications",
abstract = "Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT-2.1-4.9nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental observations indicate the high potential of HfAlOx for MIM capacitor applications.",
keywords = "HfAlO, High-k, MIM capacitor, VCC",
author = "Hota, {M. K.} and C. Mahata and S. Mallik and B. Majhi and T. Das and Sarkar, {C. K.} and Maiti, {C. K.}",
year = "2009",
doi = "10.1109/EDST.2009.5166109",
language = "English",
isbn = "9781424438310",
series = "2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09",
booktitle = "2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09",
note = "2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09 ; Conference date: 01-06-2009 Through 02-06-2009",
}