Abstract
In this paper, we examined the metal contact resistance of an InAs nanowire by using the transmission line model (TLM). The InAs nanowires were grown via a catalyst-free, self-assembled growth method using metal-organic chemical-vapor deposition (MOCVD). The heights of the InAs nanowires exceeded 20 μm, but their diameters were very uniform along the growth axis. The metal contact resistance of the InAs nanowire was dramatically reduced by using a rapid thermal annealing (RTA) process. In a nanowire-based device, minimizing the metal contact resistance is essential because of the very small metal-semiconductor contact area. The transmission line model for semiconductor nanowires demonstrated here can contribute to improving the electrical properties of nanowire-based devices.
Original language | English |
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Pages (from-to) | 961-965 |
Number of pages | 5 |
Journal | New Physics: Sae Mulli |
Volume | 65 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2015 |
Keywords
- Contact resistance
- Inas nanowire
- Ohmic contact
- Transmission line model