Characterization of the ohmic-contact properties of an InAs nanowire by using the transmission line model

Min Hyeok Jo, Chan Ho Choi, Jae Cheol Shin

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we examined the metal contact resistance of an InAs nanowire by using the transmission line model (TLM). The InAs nanowires were grown via a catalyst-free, self-assembled growth method using metal-organic chemical-vapor deposition (MOCVD). The heights of the InAs nanowires exceeded 20 μm, but their diameters were very uniform along the growth axis. The metal contact resistance of the InAs nanowire was dramatically reduced by using a rapid thermal annealing (RTA) process. In a nanowire-based device, minimizing the metal contact resistance is essential because of the very small metal-semiconductor contact area. The transmission line model for semiconductor nanowires demonstrated here can contribute to improving the electrical properties of nanowire-based devices.

Original languageEnglish
Pages (from-to)961-965
Number of pages5
JournalNew Physics: Sae Mulli
Volume65
Issue number10
DOIs
StatePublished - 1 Oct 2015

Keywords

  • Contact resistance
  • Inas nanowire
  • Ohmic contact
  • Transmission line model

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