Abstract
We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.
Original language | English |
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Article number | 112113 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 11 |
DOIs | |
State | Published - 2006 |