Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Hyunsik Im; Yu A. Pashkin; T. Yamamoto; O. Astafiev; Y. Nakamura; J. S. Tsai

doi:10.1063/1.2186507

Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

Hyunsik Im
, Yu A. Pashkin
, T. Yamamoto
, O. Astafiev
, Y. Nakamura
, J. S. Tsai

Division of System Semiconductor

RAS - P.N. Lebedev Physics Institute

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

Original language	English
Article number	112113
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2186507
State	Published - 2006

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10.1063/1.2186507

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title = "Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers",

abstract = "We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.",

author = "Hyunsik Im and Pashkin, \{Yu A.\} and T. Yamamoto and O. Astafiev and Y. Nakamura and Tsai, \{J. S.\}",

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language = "English",

volume = "88",

journal = "Applied Physics Letters",

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T1 - Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

AU - Im, Hyunsik

AU - Pashkin, Yu A.

AU - Yamamoto, T.

AU - Astafiev, O.

AU - Nakamura, Y.

AU - Tsai, J. S.

PY - 2006

Y1 - 2006

N2 - We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

AB - We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.

UR - https://www.scopus.com/pages/publications/33645139015

U2 - 10.1063/1.2186507

DO - 10.1063/1.2186507

M3 - Article

AN - SCOPUS:33645139015

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112113

ER -

Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers

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