Charge capture kinetics of nitride traps in Oxide-Nitride-OxidE(ONO) structures

H. Y. Cho, C. J. Park, H. T. Oh, D. W. Kwak, Y. H. Lee, W. C. Yang, C. W. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Oxide-Nitride-Oxide (ONO) structures have been fabricated on n- and p-type Si (001) substrates for volatile memory device applications. Capacitance-voltage hysteresis loops are measured for the capacitors fabricated with ONO structures. The difference of the flat band voltage is about 9.0V for p-type substrates and 7.2V for n-type substrates, respectively. Deep level transient spectroscopy is employed to investigate energy levels of charge traps and capture kinetics of charge carriers in ONO structures. The hole traps are observed to be at 2.44eV above the valence band maximum of the nitride layer or 0.24 eV above the valence band maximum of Si with the capture cross section of 3.99×10-15 cm2. The trap amplitude is found to be dependent upon the logarithm of the filling pulse time in the ranges from 10-5 to 10-2 s. This suggests that the charge traps in SONOS can be distinctly classified by investigating the capture kinetics of charges. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages671-679
Number of pages9
Edition5
ISBN (Electronic)1566774446
DOIs
StatePublished - 2006
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 16 Oct 200521 Oct 2005

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period16/10/0521/10/05

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