Charge conversion effects of carbon nanotube network transistors by temperature for Al2O3 gate dielectric formation

Un Jeong Kim, Hyung Bin Son, Eun Hong Lee, Jong Min Kim, Shin Chul Min, Wanjun Park

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report on the observation of the electrical characteristics for field effect transistors with random networks of single-walled carbon nanotubes induced by thermal contribution on gate dielectric formation. For the Al 2O3 gate dielectric, only the deposition temperature gradually changes the electrical polarity from p-type to n-type. Competition between the electron transfer from the Al2 O3 layers to the nanotube surface and the electron capture by the oxygen molecules adsorbed on the tube wall is critical for transport depending on the deposition temperature.

Original languageEnglish
Article number032117
JournalApplied Physics Letters
Volume97
Issue number3
DOIs
StatePublished - 19 Jul 2010

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