Charge trapping characteristics in high-k gate dielectrics on germanium

C. Mahata, M. K. Bera, P. K. Bose, C. K. Maiti

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The results of a comparative study on the charge trapping/detrapping behavior in thin ZrO2 and TiO2 high-k gate dielectrics on p-Ge (100) under stressing in constant current (CCS, 1.02-5.1 C cm- 2) and voltage (CVS, - 5 V to - 7 V) at gate injection mode are presented. Stoichiometric thin films of ZrO2 and TiO2 have been deposited on p-Ge (100) using organometallic sources at relatively low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma discharge at a pressure of 66.67 Pa. The effect of stressing on several important interfacial parameters, like, interface state density, fixed oxide charge, oxide charge centroids, and capture cross-section of traps etc. is reported.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalThin Solid Films
Volume517
Issue number1
DOIs
StatePublished - 3 Nov 2008

Keywords

  • Charge trapping
  • Ge
  • High-k gate dielectric

Fingerprint

Dive into the research topics of 'Charge trapping characteristics in high-k gate dielectrics on germanium'. Together they form a unique fingerprint.

Cite this