Abstract
The results of a comparative study on the charge trapping/detrapping behavior in thin ZrO2 and TiO2 high-k gate dielectrics on p-Ge (100) under stressing in constant current (CCS, 1.02-5.1 C cm- 2) and voltage (CVS, - 5 V to - 7 V) at gate injection mode are presented. Stoichiometric thin films of ZrO2 and TiO2 have been deposited on p-Ge (100) using organometallic sources at relatively low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma discharge at a pressure of 66.67 Pa. The effect of stressing on several important interfacial parameters, like, interface state density, fixed oxide charge, oxide charge centroids, and capture cross-section of traps etc. is reported.
Original language | English |
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Pages (from-to) | 163-166 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 1 |
DOIs | |
State | Published - 3 Nov 2008 |
Keywords
- Charge trapping
- Ge
- High-k gate dielectric