Charge trapping characteristics of HfYOx gate dielectrics on SiGe

S. Mallik, C. Mahata, M. K. Hota, C. K. Sarkar, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultrathin HfYOx gate dielectric has been deposited on Si 0.15Ge0.85 by RF co-sputtering of HfO2 and Y2O3 targets. HfYOx layers were characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray (EDX) and grazing incidence X-ray diffraction (GIXRD) to examine the composition and crystallinity. An atomic percentage of Hf:Y = 58.35:41.64 was achieved from the EDX analysis while GIXRD revealed a crystalline phase, if annealed above 500°C. Charge trapping/detrapping behavior of Al/HfYOx/SiGe MIS capacitors have been studied under DC and AC voltage stressing with different amplitudes and dynamic voltage stresses in order to study the transient response. The degradation mechanism of the dielectric has also been studied. The current transients observed during dynamic voltage stress have been interpreted in terms of the charging/discharging of traps at SiGe/HfYOx interface and bulk HfYOx. The change in Vfb and gate current during unipolar pulse voltage stressing shows that the main degradation takes place at low frequencies.

Original languageEnglish
Title of host publicationIPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOIs
StatePublished - 2010
Event17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 - Singapore, Singapore
Duration: 5 Jul 20109 Jul 2010

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Country/TerritorySingapore
CitySingapore
Period5/07/109/07/10

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