Charge trapping characteristics of TaYOx gate dielectrics on Ge under DC and AC stressing

C. Mahata, M. K. Bera, S. Mallik, B. Majhi, M. K. Hota, T. Das, S. Verma, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

TaYOx gate dielectric has been deposited on p-Ge by RF co-sputtering of Ta2O5 and Y2O3 targets. Charge trapping/detrapping behavior of Au/TaYOx/p-Ge MIS capacitors have been studied under DC and AC stressing of different amplitudes and dynamic voltage stresses in order to study the transient response and the degradation mechanism of the dielectric. The current transients observed during dynamic voltage stress have been interpreted in terms of the charging/discharging of Ge/TaYOx interface and bulk TaYOx traps. The change in Vfb, and gate current during unipolar pulse voltage stressing shows that the main degradation takes place at low frequencies. Both types of trapping are observed under dynamic stressing with the gate and substrate injections.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
PublisherElectrochemical Society Inc.
Pages699-710
Number of pages12
Edition2
ISBN (Electronic)9781607680604
ISBN (Print)9781566777100
DOIs
StatePublished - 2009
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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