@inproceedings{ffbe90d40c984da39311ef6baba39e59,
title = "Charge trapping in HfYOx gate dielectrics on strained-Si",
abstract = "HfYOx gate dielectric has been deposited on strained-Si/Si 0.8Ge0.2 by RF co-sputtering of HfO2 and Y 2O3 targets. Chemical and electrical properties have been demonstrated by x-ray photo electron spectroscopy (XPS), capacitance-voltage (C-V) and leakage current (I-V) characteristics. The reliability characteristics of HfYOx gate dielectric stacks on strained-Si/Si 0.8Ge0.2 have been investigated under different field (2.3-6MV/cm) and constant current stress (10-25mA/cm2) of different amplitude and fluence in order to analyze the degradation of oxide as a function of stress parameters. Oxide trap charge and trap centroid location have been analyzed after constant current stressing.",
author = "B. Majhi and C. Mahata and Maiti, {C. K.}",
year = "2009",
doi = "10.1149/1.3204403",
language = "English",
isbn = "9781566777407",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "163--168",
booktitle = "ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009",
address = "United States",
edition = "3",
note = "Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}