Charge trapping property of RTN grown oxynitride films on strained-Si

B. Majhi, C. Mahata, M. K. Hota, S. Mallik, T. Das, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Ultra thin (∼6-7nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900°C and 1000°C using rapid thermal nitridation in O2+N 2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed. It has been observed that the interface trap charge density (Dit) and hysteresis decrease in 1000°C RTN. It is also observed that the charge trapping behavior and the amount of border trap charge density are found to be low in the case of 1000°C RTN process.

Original languageEnglish
Title of host publication2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
DOIs
StatePublished - 2009
Event2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09 - Mumbai, India
Duration: 1 Jun 20092 Jun 2009

Publication series

Name2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09

Conference

Conference2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
Country/TerritoryIndia
CityMumbai
Period1/06/092/06/09

Keywords

  • Charge trapping
  • Siliconoxynitride
  • Strained-Si

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